图片 | 型号 | 描述 | 参考价格 | 库存数量 | 询价 |
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1:¥82.2979 10:¥74.3766 25:¥70.9188 100:¥61.5511
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参考库存:7311
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F.
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1:¥1,246.729 5:¥1,216.7614 10:¥1,186.4887 25:¥1,169.889
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参考库存:56694
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Power Transistor LdmoST N-ch Plastic
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600:¥181.8057
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参考库存:56439
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1:¥87.7558 10:¥79.3712 25:¥75.6874 100:¥65.6982
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参考库存:6007
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MOSFET N-channel 600 V, 0.155 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a PowerFLAT 8x8 HV package
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1:¥28.6568 10:¥24.3628 100:¥21.131 250:¥19.9784
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参考库存:5660
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1:¥74.9981 10:¥67.7774 25:¥64.6247 100:¥56.0932
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参考库存:5583
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 N-Ch 900W 100V RF Mosfet in STAC pack
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80:¥724.1379
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参考库存:55063
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3,000:¥12.2153 6,000:¥11.752
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参考库存:54626
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MOSFET N-Ch 600 Volt 20 Amp
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1:¥44.7932 10:¥38.1149 100:¥33.0412 250:¥31.3462 1,000:¥23.6622 2,000:查看
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参考库存:9529
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1:¥22.3627 10:¥18.984 100:¥16.4415 250:¥15.594
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参考库存:4767
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MOSFET Automotive N-channel 600 V, 0.070 typ., 36 A MDmesh DM6 Power MOSFET in an I PAK package
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1:¥48.4092 10:¥41.1094 100:¥35.6515 250:¥33.8096
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参考库存:4440
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IGBT 晶体管 Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
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1:¥64.0032 10:¥57.856 25:¥55.1666 100:¥47.8668
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参考库存:6272
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 POWER R.F. N-Ch Trans
PDF数据手册
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1:¥254.1822 5:¥251.5719 10:¥234.4411 25:¥223.9095 600:¥181.8057
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参考库存:52922
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 HF/VHF/UHF RF N-Ch 300W 15dB 175MHz
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50:¥874.1341 100:¥830.4144
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参考库存:52672
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MOSFET N-channel 60 V, 0.0012 Ohm typ., 260 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
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1:¥24.3628 10:¥20.7468 100:¥17.9783 250:¥17.063
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参考库存:2980
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600:¥58.3984 1,200:¥53.562
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参考库存:52280
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3,000:¥8.3733 6,000:¥8.0682 9,000:¥7.684
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参考库存:52153
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射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF Pwr Transistors LDMOST Plastic N Ch
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400:¥316.2757
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参考库存:51476
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MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220FP ultra narrow leads package
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1:¥47.799 10:¥40.567 100:¥35.1882 250:¥33.3463
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参考库存:1989
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5,000:¥10.7576
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参考库存:51409
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