| 图片 | 型号 | 描述 | 参考价格 | 库存数量 | 询价 |
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1:¥111.9604
10:¥102.9656
25:¥98.6603
100:¥86.9083
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参考库存:6024
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1:¥11.3678
10:¥9.605
100:¥7.684
500:¥6.7348
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参考库存:5967
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IGBT 模块 SLLIMM-nano 2nd series IPM, 3 A, 600 V 3-phase IGBT inverter bridge
PDF数据手册
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1:¥62.0822
10:¥56.1723
25:¥53.562
100:¥46.4882
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参考库存:7200
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156:¥86.9083
312:¥82.6821
624:¥77.3033
1,092:¥70.9188
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参考库存:42726
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MOSFET N-channel 600 V, 0.600 Ohm typ., 5.5 A MDmesh M2 EP Power MOSFET in a PowerFLAT 5x6 HV package
PDF数据手册
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3,000:¥6.441
6,000:¥6.2037
9,000:¥5.9551
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参考库存:42262
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1:¥33.5836
10:¥28.589
100:¥24.747
250:¥23.5153
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参考库存:5217
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2,000:¥5.5257
4,000:¥4.9042
10,000:¥4.7234
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参考库存:42200
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1:¥7.8422
10:¥6.667
100:¥5.1302
500:¥4.5313
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参考库存:5110
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IGBT 晶体管 Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
PDF数据手册
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1:¥34.1147
10:¥29.041
100:¥25.1312
250:¥23.8204
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参考库存:9016
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3,000:¥6.667
6,000:¥6.4184
9,000:¥6.1698
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参考库存:41399
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3,000:¥4.3844
9,000:¥4.2262
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参考库存:40976
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IGBT 晶体管 Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a D2PAK package
PDF数据手册
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1:¥21.5152
10:¥18.2834
100:¥14.5996
500:¥12.8368
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参考库存:3921
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3,000:¥6.9495
6,000:¥6.7009
9,000:¥6.441
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参考库存:40899
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射频金属氧化物半导体场效应(RF MOSFET)晶体管
PDF数据手册
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1:¥494.3863
5:¥483.3236
10:¥464.4187
25:¥449.4349
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参考库存:40372
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1:¥32.5779
10:¥27.6624
100:¥24.0464
250:¥22.826
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参考库存:3342
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3,000:¥5.4014
6,000:¥5.198
9,000:¥4.9946
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参考库存:40330
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1:¥8.9948
10:¥7.6388
100:¥5.876
500:¥5.1867
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参考库存:3146
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1,000:¥11.2209
2,000:¥10.6785
5,000:¥10.2943
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参考库存:40003
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156:¥84.4449
312:¥80.2978
624:¥75.0772
1,092:¥68.93
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参考库存:39703
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3,000:¥3.8872
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参考库存:39618
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